amplifiers - low noise - chip 1 1 - 186 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com gaas hemt mmic low noise amplifier, 1 - 12 ghz v03.0410 general description features functional diagram noise figure: 1.75 db @ 10 ghz gain: 17 db p1db output power: +19 dbm @ 5 ghz supply voltage: +5v @ 55 ma die size: 2.64 x 1.64 x 0.1 mm electrical speci cations* , t a = +25 c, vdd= +5v typical applications this hmc-alh444 is ideal for: ? wideband communication systems ? surveillance systems ? point-to-point radios ? point-to-multi-point radios ? military & space ? test instrumentation * vsat the hmc-alh444 is a gaas mmic hemt low noise wideband ampli er die which operates between 1 and 12 ghz. the ampli er provides 17 db of gain, 1.5 db noise gure and +19 dbm of output power at 1 db gain compression while requiring only 55 ma from a +5v supply voltage. hmc-alh444 parameter min. typ. max. units frequency range 1 - 12 ghz gain 15 17 db gain variation over temperature 0.02 db / c noise figure 1.5 2 db input return loss 10 db output return loss 14 db output ip3 28 dbm output power for 1 db compression 19 dbm supply current (idd) (vdd = 5v, vgg1 = -0.5v typ., vgg2 = 1.5v typ) 55 ma *unless otherwise indicated, all measurements are from probed die
amplifiers - low noise - chip 1 1 - 187 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-alh444 v03.0410 gaas hemt mmic low noise amplifier, 1 - 12 ghz noise figure vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency 0 2 4 6 8 10 12 14 16 18 20 02468101214 gain (db) frequency (ghz) -20 -15 -10 -5 0 02468101214 return loss (db) frequency (ghz) 0 0.5 1 1.5 2 2.5 02468101214 noise figure (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 02468101214 return loss (db) frequency (ghz)
amplifiers - low noise - chip 1 1 - 188 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-alh444 v03.0410 gaas hemt mmic low noise amplifier, 1 - 12 ghz outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 drain bias voltage +5.5 vdc rf input power 12 dbm gate bias voltage vgg1 -1 to 0.3 vdc gate bias voltage vgg2 0 to 2.5 vdc thermal resistance (channel to die bottom) 109 c/w channel temperature 180 c storage temperature -65 to +150 c operating temperature -55 to +85 c die packaging information [1] standard alternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - low noise - chip 1 1 - 189 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2rfout this pad is ac coupled and matched to 50 ohms. 3vdd power supply voltage for the ampli er. see assembly for required external components. 4, 5 vgg1, vgg2 gate control for ampli er. please follow mmic ampli er bias- ing procedure application note. see assembly for required external components. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc-alh444 v03.0410 gaas hemt mmic low noise amplifier, 1 - 12 ghz
amplifiers - low noise - chip 1 1 - 190 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. assembly diagram hmc-alh444 v03.0410 gaas hemt mmic low noise amplifier, 1 - 12 ghz
amplifiers - low noise - chip 1 1 - 191 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd pro- tective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc-alh444 v03.0410 gaas hemt mmic low noise amplifier, 1 - 12 ghz
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